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| RF3223 0 RoHS Compliant & Pb-Free Product Typical Applications * Basestation Applications * Cellular and PCS Systems * CDMA, W-CDMA Systems Product Description The RF3223 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500MHz to 3GHz frequency range. The RF3223 operates from a single 5V power supply, and is assembled in an economical 3mmx3mm QFN package. -A2 PLCS 0.10 C A HIGH LINEARITY/DRIVER AMPLIFIER * GSM/EDGE Systems * Final PA for Low-Power Applications 2 PLCS 0.05 C 3.00 0.10 C B 2 PLCS 0.70 0.65 0.90 0.85 0.05 0.00 3.00 12 MAX 2 PLCS 0.10 C B 2.75 SQ. 0.10 C A 2 PLCS -B- Dimensions in mm. -C- SEATING PLANE Shaded lead is pin 1. 0.10 M C A B 0.60 0.24 TYP 0.30 0.18 PIN 1 ID R.20 0.75 0.50 1.25 0.95 SQ. 0.50 Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 12-Pin, 3x3 Features * 500MHz to 2000MHz * +44.0dBm Output IP3 * +14.0dB Gain at 850MHz BIAS GND GND * +11.4dBm Input P1dB at 850MHz * 3.4dB Noise Figure at 850MHz 9 GND 8 RF OUT 7 GND 12 GND 1 RF IN 2 GND 3 4 GND 11 10 * Single 5V Power Supply Ordering Information RF3223 RF3223PCBA-41X High Linearity/Driver Amplifier Fully Assembled Evaluation Board 5 GND 6 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 050822 4-553 RF3223 Absolute Maximum Ratings Parameter RF Input Power Device Voltage Device Current Operating Temperature Storage Temperature Rating +20 -0.5 to +6.0 250 -40 to +85 -40 to +150 Unit dBm V mA C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall AC Specifications Frequency Gain (Small Signal) Input VSWR Output VSWR Reverse Isolation Output IP3 Output P1dB Noise Figure Min. Specification Typ. Max. Unit Condition VCC =5V, RFIN =-10dBm, Freq=850MHz, with Temp=25C unless otherwise noted. 500 12 19 41 23 14 1.4 1.3 21 45 +24.5 3.4 75 154 2000 15 1.7 MHz dB SWR SWR dBm dBm dB C/W C F1 = 850MHz, F2 =851MHz 4.0 Thermal ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time To Failures ICC =160mA, PDISS =0.913W. (See Note) TCASE =+85C TCASE =+85C 5500 years DC Specifications Device Voltage 4.5 5.0 5.5 V ICC =160mA Operating Current Range 110 150 170 mA VCC =5V Note: The RF3223 must be operated at or below 175mA in order to achieve the thermal performance listed above. While the RF3223 may be operated at higher bias currents, 175mA is the recommended bias to ensure the highest possible reliability and electrical performance. 4-554 Rev A1 050822 RF3223 Pin 1 2 Function GND RF IN Description Ground connection. RF input pin. This pin is not internally DC-blocked. A DC blocking capacitor suitable for the frequency of operation should be used. To Bias Circuit RF OUT RF IN Interface Schematic 3 4 5 6 7 8 GND GND GND GND GND RF OUT Ground connection. Ground connection. Ground connection. Ground connection. Ground connection. Amplifier output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. Ground connection. This pin is used to control the bias current. An external resistor may be used to set the bias current for any VPD voltage. Allows for trade-offs between IP3 versus noise figure and TMAX. VCC See pin 2. 9 10 11 GND GND BIAS 12 Pkg Base GND GND Ground connection. Ground connection. Vias to ground required under the package base. Rev A1 050822 4-555 RF3223 Application Schematic - 850MHz VCC 240 12 1 100 pF RF IN 2 3 4 11 10 9 8 12 pF 7 100 nH RF OUT 5 6 4-556 Rev A1 050822 RF3223 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) BIAS + C8 4.7 F C6 10 pF C5 0.1 F 240 C3 10 pF C4 0.1 F + C7 4.7 F VCC 12 C1 100 pF 1 2 3 4 11 10 9 8 7 L2 100 nH C2 12 pF J1 RF IN 50 strip 50 strip J2 RF OUT 5 6 P1 P1-1 1 2 P1-3 3 CON3 BIAS GND VCC Rev A1 050822 4-557 RF3223 Evaluation Board Layout Board Size 1.5" x 1.5" Board Thickness 0.032", Board Material FR-4 4-558 Rev A1 050822 RF3223 ICC versus VCC Across Temperature 210.0 -40C 25C 190.0 85C 16.0 18.0 -40C 25C 85C Gain versus Frequency Across Temperature (VCC=5.0V) 170.0 14.0 150.0 Gain (dB) 4.0 4.3 4.5 4.8 5.0 5.3 5.5 5.8 6.0 ICC (mA) 130.0 12.0 110.0 10.0 90.0 8.0 70.0 50.0 6.0 300.0 500.0 700.0 900.0 1100.0 1300.0 1500.0 1700.0 1900.0 2100.0 2300.0 VCC (V) Frequency (MHz) OIP3 versus Frequency Across Temperature 48.0 47.0 46.0 45.0 -40C 25C 85C 26.0 Output P1dB versus Frequency Across Temperature 27.0 -40C 25C 85C (VCC=5.0V) (VCC=5.0V) Output P1dB (dBm) OIP3 (dBm) 44.0 43.0 42.0 41.0 40.0 39.0 38.0 300.0 500.0 700.0 900.0 1100.0 1300.0 1500.0 1700.0 1900.0 2100.0 2300.0 25.0 24.0 23.0 22.0 300.0 500.0 700.0 900.0 1100.0 1300.0 1500.0 1700.0 1900.0 2100.0 2300.0 Frequency (MHz) Frequency (MHz) Input VSWR versus Frequency Across Temperature 2.0 -40C 25C 85C 1.8 Output VSWR versus Frequency Across Temperature 4.0 -40C 25C 85C 3.5 (VCC=5.0V) (VCC=5.0V) 3.0 1.6 VSWR VSWR 1.4 1.2 1.0 300.0 500.0 700.0 900.0 1100.0 1300.0 1500.0 1700.0 1900.0 2100.0 2300.0 2.5 2.0 1.5 1.0 300.0 500.0 700.0 900.0 1100.0 1300.0 1500.0 1700.0 1900.0 2100.0 2300.0 Frequency (MHz) Frequency (MHz) Rev A1 050822 4-559 RF3223 Noise Figure versus Frequency Across Temperature 7.0 -40C 25C 85 6.0 (VCC=5.0V) Noise Figure (dB) 5.0 4.0 3.0 2.0 1.0 300.0 500.0 700.0 900.0 1100.0 1300.0 1500.0 1700.0 1900.0 2100.0 2300.0 Frequency (MHz) 4-560 Rev A1 050822 |
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